Design A New Stable And Low Power Bandgap Reference Circuit Based On Fin-FET Device

This paper describes the design of a bandgap reference, implemented in 32 nm FinFET technology. The paper introduced new method for increasing stability of output voltage of bandgap circuit. In the proposed architecture extra feedback is used for setting the output voltage in fixed voltage. This feedback makesbandgap circuit more stable and speedy employing back gate biasing of the FinFET devices. This circuit generates a reference voltage of 300mV and has a variation about 0.041% versus temperature in TT corner. High gain OTA utilized in the feedback loop was designed by innovative bulk FinFET devices. FinFET OTA used in this work is very low power and high speed compared to conventional CMOS designs.It was tested with supply voltages between 0.7 and 0.9volt and between -40 ͦ C and +120 ͦ C. The variation of output voltage versus VDD variation is lower than 0.01% in TT corner. This circuit works in a current feedback mode, and it generates its own reference current, resulting in a stable operation. For resistor and diode connected transistor the technology elements were used instead of ideal components. The technology in use is 32 nm PTM.